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| SHINDENGEN General Purpose Rectifiers SIL Bridges S1VB80 800V 1A FEATURES *oe Small Single In-Line(:SIL)Package *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION OUTLINE DIMENSIONS Case : 1V (Unit : mm) *oe power supply Switching *oe Home Appliance,Office Equipment *oe Telecommunication,Factory automation RATINGS *oe Absolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage V 800 RM I Average Rectified Forward Current50Hz sine wave,R-load, On glass-epoxy substrate Ta=25*Z 1 O Peak Surge Forward Current IFSM50Hz sine wave,Non-repetitive 1cycle peak value, Tj=25*Z 30 2 I t 1ms*...t*10ms*@Tj=25*Z Current Squared Time 4.5 *oe Electrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions V I =0.5A, Pulse measurement,Rating of per diode Forward Voltage F F IR V=V , Pulse measurement,Rating of per diode Reverse Current R RM Thermal Resistance AEjl junction to lead AEja junction to ambient Unit *Z *Z V A A 2 As Ratings Unit Max.1.05 V Max.10 EA Max.16 *Z/W Max.62 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1VBx 10 Forward Voltage Forward Current IF [A] Tl=150C [TYP] 1 Tl=25C [TYP] Pulse measurement per diode 0.1 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] S1VBx 2 Forward Power Dissipation Forward Power Dissipation PF [W] 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 Average Rectified Forward Current IO [A] Tj= 150C Sine wave S1VBx 1.2 Derating Curve Average Rectified Forward Current IO [A] 1 SIN l l=10mm PCB Glass-epoxy substrate Soldering land 3mm 0.8 0.6 l=2mm 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air S1VBx 50 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 40 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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